note: msl rating = level 2a ammp-5620 6 C 20 ghz high gain amplifer in smt package data sheet description the ammp-5620 mmic is a gaas wide-band amplifer in a surface mount package designed for medium output power and high gain over the 6-20 ghz frequency range. the 3 cascaded stages provide high gain while the single bias supply ofers ease of use. it is fabricated using a phemt integrated circuit process. the rf input and output ports have matching circuitry for use in 50-ohms environments. the mmic is a cost efective alternative to hybrid (discrete fet) amplifers that require complex tuning and assembly processes. package diagram attention: observe precautions for handling electrostatic sensitive devices. esd machine model (40v) esd human body model (150v) refer to avago application note a004r: electrostatic discharge, damage and control. features ? surface mount package, 5.0 x 5.0 x 1.25 mm ? wide frequency range 6-20 ghz ? high gain: 17.5 db typical ? medium output p1db: 14.8 dbm typical ? input and output return loss: <-10 db typical ? 50 ohm input and output match ? single supply bias: 5v @ 95 ma typical applications ? general purpose, wide band amplifer in communication systems or microwave instrumentation ? high gain amplifer functional block diagram note: package base: gnd pin function 1 nc 2 vd 3 nc 4 rf_out 5 nc 6 nc 7 nc 8 rf_in 1 2 3 8 4 7 6 5 rfin rfout vd 0.1uf 100pf ammp-5620 1 2 3 7 5 6 4 8 rfin rfout vd nc nc nc nc nc
2 electrical specifcations 1. small/large signal data measured in a fully de-embedded test fxture at ta = 25 degree celsius. 2. specifcations are derived from measurements in a 50 ohm test environment. aspects of the amplifer performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching. 3. all tested parameters guaranteed with measurement accuracy 0.5 db for nf and 1.0 db for gain. table 1. rf electrical characteristics (t a =25c, freq=18ghz, vd=5.0v, idq=95ma) parameter min typ. max unit small-signal gain, gain 15.5 17.5 19.5 db noise figure, nf 5.1 7.0 db output power at 1db gain compression, p1db 14.8 dbm third order intercept point, oip3 22.5 dbm input return loss, rlin 11.5 db output return loss, rlout 11.6 db reverse isolation, isolation -43.0 db table 2. recommended operating range description min. typical max. unit drain supply voltage, vd 5 v drain supply current, id 70 95 130 ma notes: 1. ambient operation temperature ta = 25c unless otherwise noted. 2. channel-to-board thermal resistance is measured using infrared microscopy method. table 3. thermal properties parameter test conditions value thermal resistance, jc jc = 28 c/w note: channel-to-board thermal resistance is measured using infrared microscopy method. absolute minimum and maximum ratings table 4. minimum and maximum ratings description min. max. unit comments drain supply voltage, vd 7.5 v total drain current, id 135 ma rf input power, pin 20 dbm cw power dissipation, pd 1.0 w channel temperature, tch +150 c storage temperature, tstg -65 +150 c maximum assembly temperature, tmax +260 c notes: 1. operation in excess of any one of these conditions may result in permanent damage to this device. the absolute maximum ratings for vd, id, pd and pin were determined at an ambient temperature of 25c unless noted otherwise.
3 figure 1. gain figure 2. isolation figure 5. noise figure figure 6. p1db figure 3. input return loss figure 4. output return loss figure 7. pout and id vs. pin selected performance plots all data measured on at vd = 5v, id = 95ma, ta = 25 c, and 50 at all ports. note: these measurements are obtained using demo board with 50 ohm traces at input and output. aspects of the amplifer performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) gain (db) -70 -60 -50 -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) isolation (db) -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) input rl (db) -35 -30 -25 -20 -15 -10 -5 0 4 7 10 13 16 19 22 frequency (ghz) output rl (db) 0 1 2 3 4 5 6 7 8 4 7 10 13 16 19 22 frequency (ghz) nf (db) 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) op1db (dbm) -10 -5 0 5 10 15 20 -20 -15 -10 -5 0 5 10 pin (dbm) pout (dbm) 90 95 100 105 110 115 120 id (ma) 18 ghz 13 ghz 7 ghz
4 figure 8. gain and voltage figure 9. isolation and voltage figure 10. input return loss and voltage figure 11. output return loss and voltage figure 12. noise figure and voltage figure 13. p1db and voltage note: these measurements are obtained using demo board with 50 ohm traces at input and output. aspects of the amplifer performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. over voltage plots all data measured on at vd = 5v, id = 95ma, ta = 25 c, and 50 at all ports. 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) gain (db) vd=4v vd=5v vd=6v -70 -60 -50 -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) isolation (db) vd=4v vd=5v vd=6v -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) input rl (db) vd=4v vd=5v vd=6v -35 -30 -25 -20 -15 -10 -5 0 4 7 10 13 16 19 22 frequency (ghz) output rl (db) vd=4v vd=5v vd=6v 0 1 2 3 4 5 6 7 8 4 7 10 13 16 19 22 frequency (ghz) nf (db) vd=4v vd=5v vd=6v 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) op1db (dbm) vd=4v vd=5v vd=6v
5 figure 14. gain and temperature figure 15. isolation and temperature figure 17. output return loss and temperature figure 18. noise figure and temperature figure 20. id vs. vd figure 16. input return loss and temperature figure 19. p1db and temperature note: these measurements are obtained using demo board with 50 ohm traces at input and output. aspects of the amplifer performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. over temperature performance plots all data measured on at vd = 5v, id = 95ma, ta = 25 c, and 50 at all ports 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) gain (db) -40 c 25 c 85 c -70 -60 -50 -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) isolation (db) -40 c 25 c 85 c -40 -30 -20 -10 0 4 7 10 13 16 19 22 frequency (ghz) input rl (db) -40 c 25 c 85 c -35 -30 -25 -20 -15 -10 -5 0 4 7 10 13 16 19 22 frequency (ghz) output rl (db) -40 c 25 c 85 c 0 1 2 3 4 5 6 7 8 4 7 10 13 16 19 22 frequency (ghz) nf (db) -40 c 25 c 85 c 0 4 8 12 16 20 4 7 10 13 16 19 22 frequency (ghz) op1db (dbm) -40 c 25 c 85 c 80 85 90 95 100 3 3.5 4 4.5 5 5.5 6 vd (v) id (ma) -40 c 25 c 85 c
6 biasing and operation the ammp-5620 only requires a single positive supply connected to the vd pin (2). the recommended supply voltage is 5v. the supply should be bypassed with a 0.1uf capacitor placed as close to the component as possible. the package base is the rf and dc ground con - nection. the biasing arrangement is shown in figure 21. figure 22 shows a simplifes schematic for the amplifer die. all three stages are self-biased as shown. each stage has feedback around it to control the gain, match and performance, resulting in excellent wideband perfor - mance. also shown are the on-chip dc blocking capaci - tors for both the rfin and rfout pins. please refer to the absolute maximum ratings table for allowed dc and thermal conditions. figure 21. typical application figure 22. simplifed mmic schematics figure 23. demonstration board (available upon request) the ammp packaged devices are compatible with high volume surface mount pcb assembly processes. the pcb material and mounting pattern, as defned in the data sheet, optimizes rf performance and is strongly recommended. an electronic drawing of the land pattern is available upon request from avago sales & application engineering.
package dimension, pcb layout and tape and reel information please refer to avago technologies application note 5520, amxp-xxxx production assembly process (land pattern a). part number ordering information part number devices per container container AMMP-5620-BLKG 10 antistatic bag ammp-5620-tr1g 100 7 reel ammp-5620-tr2g 500 7 reel for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. obsoletes av01-0585en av02-0513en - july 16, 2013 typical scattering parameters please refer to for typical scattering parameters data.
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